Schottky contact investigation on reactive ion etched 6H α-SiC

Abstract

Reactive Ion Etching (RIE) was performed on monocrystalline 6H α-SiC samples with CF4/H2-based gas mixtures. Schottky contacts on RIE etched α-SiC were compared with reference Schottky contacts on non-etched α-SiC. © 1997 Elsevier Science S.A