Cai, Haifang

Chen, Chen

Chen, Lingxiu

Elibol, Kenan

Guo, Yufeng

Jiang, Chengxin

Li, Chen

Meyer, Jannik C.

Mu, Xiaojing

Shi, Wenhao

Taniguchi, Takashi

Wang, Haomin

Wang, Hui Shan

Wang, Xiujun

Watanabe, Kenji

Abstract: Hexagonal boron nitride (h-BN) has long been recognized as an ideal substrate for electronic devices due to its dangling-bond-free surface, insulating nature and thermal/chemical stability. These properties of the h-BN multilayer are mainly determined by its lattice structure. Therefore, to analyse the lattice structure and orientation of h-BN crystals becomes important. Here, the stacking order and wrinkles of h-BN are investigated by transmission electron microscopy. It is experimentally confirmed that the layers in the h-BN flakes are arranged in the AA ' stacking. The wrinkles in a form of threefold network throughout the h-BN crystal are oriented along the armchair direction, and their formation mechanism was further explored by molecular dynamics simulations. Our findings provide a deep insight about the microstructure of h-BN and shed light on the structural design/electronic modulations of two-dimensional crystals

Institutional Repository Universiteit Antwerpen

Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride

Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride

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Institutional Repository Universiteit Antwerpen