Low-frequency noise behavior in P-channel SOI FinFETs processed with different strain techniques

Abstract

International audienceThe aim of this paper is to investigate the low-frequency noise behavior in p-channel SOI FinFETs processed with different strain techniques. An unusual noise behavior was observed for all devices studied. This unusual noise was investigated for different applied gate voltages and different channel lengths at room temperature. The carrier number fluctuations explain the flicker noise for all devices. The different strain techniques employed have no significant impact in the noise level