Beczkowski, Szymon Michal

Jørgensen, Asger Bjørn

Kubulus, Pawel Piotr

Munk-Nielsen, Stig

English

In order to ensure proper switching of SiC devices gate impedance has to be carefully selected. Chosen topology and parameter values allow for damping the oscillations in poorly designed layouts, as well as adjusting dV/dt levels in cases where layout allows for too fast switching. Due to a wide choice of gate impedance topologies, some with multiple tunable parameters, experimental fine-tuning is a time-consuming process and analytical predictions do not take full effect of the parasitic elements into account. For this reason, an automated design process is developed using Matlab and LTSpice and the results are verified experimentally in a Double Pulse Test(DPT) setup, for the prediction accuracy assessment

Automated gate impedance network design for SiC MOSFETs using SPICE solver interfaced with MATLAB environment

https://vbn.aau.dk/files/492359431/0379_epe2022_full_15341524.pdf

Automated gate impedance network design for SiC MOSFETs using SPICE solver interfaced with MATLAB environment

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