Fast relaxation of free carriers in compensated germanium

Abrosimov, Nickolay; Deßmann, N.; Hübers, H.-W.; Mittendorff, M.; Pavlov, S.G.; Shastin, V.N.; Tsyplenkov, V.V.; Winnerl, Stephan; Zhukavin, R.Kh.

Fast relaxation of free carriers in compensated germanium

Authors: Nickolay Abrosimov
N. Deßmann
H.-W. Hübers
M. Mittendorff
S.G. Pavlov
V.N. Shastin
V.V. Tsyplenkov
Stephan Winnerl
R.Kh. Zhukavin
Publication date: 1 August 2013
Publisher

Abstract

We reported on the observation of ultrafast recombination of free electrons and holes in conventionally doped from a melt n-Ge:Sb:Ga and p-Ge:Ga:Sb crystals (net concentration > 2×1015 cm-3) with high level of compensation, up to 50%

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