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Evidence for shallow implantation during the growth of bismuth nanocrystals by pulsed laser deposition

Abstract

The shallow implantation of Bi species was analyzed for energy densities above 2 Jcm-2. The implantation range was shown to depend on the energy density used for ablation, which was related to the velocity of the Bi atoms and ions in the plasma. The kinetic energy of the Bi species in the plume generated at laser energy densities above 2 J cm-2 was estimated to be around 200 eV.This work has been partially supported by project TIC99-0866, CICYT (Spain). One of the authors (J.-P.B.) acknowledges support by the EPSRC and a Marie Curie Fellowship of the EC under Contract No. HPMT-CT-2000-00064.Peer Reviewe

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