Bao, Peng

Brox-Nilsen, Christian

Jin, Jidong

Luo, Yi

Song, Aimin M.

IEEE Transactions on Electron Devices

English

Polycrystalline zinc oxide (ZnO) thin-film transistors with a Ta 2O5 high-k gate dielectric layer are fabricated by radio-frequency magnetron sputtering at room temperature. Under the optimal deposition conditions, the devices show saturation mobility values over 50 cm2/Vs, an ON/OFF ratio of &gt; 105, and a subthreshold voltage swing of 0.29 V/decade at a low operating voltage of 4 V. This is, to the best of our knowledge, one of the highest field-effect mobility values achieved in ZnO-based thin-film transistors by room-temperature sputtering. The stability of the devices is also examined and the sensitive dependence of the carrier mobility on the deposition conditions is discussed. © 1963-2012 IEEE

The University of Manchester - Institutional Repository

Sputtered ZnO thin-film transistors with carrier mobility over 50 2/Vs

Christian Brox-Nilsen

Jidong Jin

Yi Luo

Peng Bao

Aimin M. Song

Crossref

Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 ${\rm cm}^{2}/{\rm Vs}$

https://pure.manchester.ac.uk/ws/files/27077293/POST-PEER-REVIEW-PUBLISHERS.PDF

Sputtered ZnO thin-film transistors with carrier mobility over 50 2/Vs

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