Zinc oxide exhibits n-type semiconductivity that is caused by the deviations from stoichiometry. The electrical properties of ZnO can be enhanced by doping a trivalent dopant. It is also important to understand the effect of these dopants on the microstructure of ZnO ceramics. The conventional ceramic processing techniques were used to prepare un-doped and the 0.5 moll)/ii A1203-0.1 mol% B203-doped ZnO ceramics. The samples were sintered at 1200-1400 C for 1 and 3 hours. The microstructure of the samples was investigated by using a scanning electron microscope. The hulk density of the sintered samples was calculated from their weight and dimensions. According to the XRD results, the formation of ZnA1204 phase was confirmed in the samples of 0.5 mol% A1203-0.1 mol% B203-doped ZnO whereas the only ZnO phase was observed in the un-doped ZnO samples. The electrical resistance of the samples was measured at the room temperature
