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Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible
Authors
Kaspars Dadzis
M. Nicolai L. Lorenz-Meyer
+3 more
Robert Menzel
Angelina Nikiforova
Helge Riemann
Publication date
1 January 2020
Publisher
Weinheim : Wiley-VCH
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Abstract
In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model-based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei
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Last time updated on 23/07/2022