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Comparison Of Band Alignments At Various Cds/Cu(In,Ga)(S,Se)2 Interfaces In Thin Film Solar Cells
Authors
N. G. Dhere
O. Fuchs
+3 more
D. Groß
G. Storch
L. Weinhardt
Publication date
1 January 2006
Publisher
'Information Bulletin on Variable Stars (IBVS)'
Abstract
The band alignment at the CdS/Cu(In,Ga)(S,Se)2 interface, as derived in our earlier publications, are compared for different absorber compositions. The discussed band alignments were directly determined using a combination of UV- and x-ray photoemission and inverse photoemission. While a flat conduction band alignment can be found for low-gap material, the cell structure with a high-gap absorber shows a cliff-like alignment. The different alignments can be correlated with the respective cell parameters, explaining why the expected linear gain in open circuit voltage for the high-gap absorbers has not yet been achieved. © 2006 IEEE
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Last time updated on 10/11/2022