Thin-film resonant absorbers for the far-IR spectral range were fabricated, characterized, and modeled. The 3-μm-thick structure comprises a periodic surface array of metal squares, a dielectric spacer and a metallic ground plane. Up to 95% absorption for the fundamental band at ∼53.5μm wavelength (5.6 THz) is achieved experimentally. Absorption bands are independent of the structure period and only weakly dependent on polarization and incident angle. The results are well explained in terms of standing-wave resonances within individual metal-dielectric-metal cavities. The structure has application as a wavelength selective coating for far-IR bolometers
