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Extremely Vivid, Highly Transparent, and Ultrathin Quantum Dot Light-Emitting Diodes
Authors
Chong Rae Park
Dae-Hyeong Kim
+10 more
Dong Chan Kim
Hyojin Seung
Jiwoong Yang
Junhee Kim
Moon Kee Choi
Nanshu Lu
Sae Jin Sung
Taeghwan Hyeon
Vinayak S. Kale
Zhaohe Dai
Publication date
1 January 2018
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Displaying information on transparent screens offers new opportunities in next-generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such “see-through” displays to show vivid images over clear background view. Here transparent quantum dot light-emitting diodes (Tr-QLEDs) are reported with high brightness (bottom: ≈43 000 cd m−2, top: ≈30 000 cd m−2, total: ≈73 000 cd m−2 at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr-QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr-QLEDs (513 pixels in.−1) shows the potential of the full-color transparent display. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhe
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Last time updated on 06/02/2020