Growth of SiO x nanowire bunches cocatalyzed with Ga and Ni

Abstract

Si Ox nanowire bunches were fabricated on Ni (N O3) 2* 6 H2 O solution-coated Si(111) substrates in a chemical vapor deposition system in the presence of Ga and under the flow of Ar and N H3 gases. The roles of nickel nitrate hydrate, gallium, and ammonia in the formation of Si Ox nanowire bunches were investigated. It was found that Ni and Ga act as catalysts for the growth, while nickel nitrate hydrate also serves as a source of oxygen. The growth mechanisms of different nanowire structures obtained by varying the fabrication conditions are discussed. © 2005 American Institute of Physics.published_or_final_versio