Asahi, Ryoji

Hosono, Hideo

Ikuhara, Yuichi

Kato, Takeharu

Masuoka, Yumi

Nomura, Kenji

Ohta, Hiromichi

We report transistor characteristics and field-modulated thermopower (S) for single crystal SrTiO3-based field-effect transistors (FETs). We use 150-nm-thick amorphous 12CaO⋅7Al2O3 glass as the gate insulator of the SrTiO3-FET. The resulting SrTiO3-FET exhibits excellent transistor characteristics at room temperature: on-to-off current ratio greater than 10^6, threshold gate voltage of +1.1 V, subthreshold swing of approximately 0.3 V decade^−1, and effective mobility of 2 cm^2 V^−1 s^−1. The field-modulated S-value of the SrTiO3-FET varied from −900 to −580 μV K^−1 with electric fields of up to 2 MV cm^−1, demonstrating the effectiveness of the FET structure for the exploration of thermoelectric materials

Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO・7Al2O3 glass gate insulator

Abstract

Similar works

Full text

Available Versions

Institutional Repositories DataBase (IRDB)