Akimoto, Shingo

Nakatsuka, Osamu

Nishimura, Tsuyoshi

Zaima, Shigeaki

This paper investigated the influence of the interfacial structure on electrical properties of metal/n-Ge Schottky contacts. The native oxide on Ge surface is not the origin of Fermi level pinning (FLP) and the interfacial reaction between metal and Ge probably caused FLP. The introduction of Si inter layer was not effective to resolve the FLP of metal/Ge contacts. It is important to investigate the reaction and the crystalline structure at metal/Ge interfaces with atomic scale in detail to understand the FLP in the future

Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts

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