Baxter, Jason B.

Bear, Marcus

Choquette, Amber K.

Felix, Roberto

Gauquelin, Nicolas

Gerlach, Dominic

Krick, Alex L.

May, Steven J.

Smolin, Sergey Y.

Ueda, Shigenori

Verbeeck, Johan

Wilks, Regan G.

Abstract: The electronic properties of LaFeO3/LaMnO3 epitaxial heterojunctions are investigated to determine the valence and conduction band offsets and the nominal Mn and Fe valence states at the interface. Studying a systematic series of (LaFeO3)n/(LaMnO3)m bilayers (m  48 50) epitaxially grown in the (001) orientation using molecular beam epitaxy, layer-resolved electron energy loss spectroscopy reveals a lack of significant interfacial charge transfer, with a nominal 3+ valence state observed for both Mn and Fe across the interface. Through a combination of variable angle spectroscopic ellipsometry and hard X-ray photoelectron spectroscopy, type I energy level alignments are obtained at the LaFeO3/LaMnO3 interface with positive valence and conduction band offsets of (1.20 \ub1 0.07) eV and (0.50.7 \ub1 0.3) eV, respectively, with minimal band bending. Variable temperature resistivity measurements reveal that the bilayers remain insulating and that the presence of the heterojunction does not result in a conducting interface

Institutional Repository Universiteit Antwerpen

Energy level alignment and cation charge states at the <tex>LaFeO_{3}/LaMnO_{3}$</tex> (001) heterointerface

Energy level alignment and cation charge states at the <tex>LaFeO_{3}/LaMnO_{3}$</tex> (001) heterointerface

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Institutional Repository Universiteit Antwerpen