Niesen, L

Rosu, M.F

Sloof, W.G.

van Veen, A.

Krypton atoms incorporated in sputtered a-silicon films are investigated by means of Kr-83 Mosssbauer spectroscopy. The hyperfine parameters of the (RbI)-Rb-83 source were determined by taking a spectrum against solid krypton. Mossbauer spectra were taken for films containing krypton concentrations up to 7 at.%. A Debye temperature of 116(4) K has been measured for a sample containing 2.83 at.% Kr. The isomer shifts found for all spectra and the high Debye temperature indicate that krypton resides in small highly pressurized precipitates.</p

A Mossbauer study of Kr incorporations in sputtered a-Si films

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Proceedings - University of Groningen