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Pulse ion annealing of silicon layers with silver nanoparticles formed by ion implantation
Authors
Batalov R.I.
Bayazitov R.M.
Rogov A.M.
Stepanov A.L.
Publication date
1 January 2020
Publisher
Abstract
© 2020 Elsevier Ltd The paper presents the results of Si surface modification created by implantation with Ag+ ions at energy of 30 keV, current density of 8 μA/cm2 for various doses from 6.0·1015 to 7.5·1016 ion/cm2 and annealed by powerful beam pulses (C+, H+) of nanosecond duration. Scanning electron microscopy and optical reflection measurements showed that after ion implantation an amorphous a-Si layer on the surface of c-Si substrates with Ag nanoparticles was formed. Followed pulse ion beam annealing of sample obtained at lowest dose of 6.0·1015 ion/cm2 leads to melting and recrystallization of the Si surface layer with segregation of Ag nanoparticles. For samples implanted with doses higher than 2.5·1016 ion/cm2 after annealing an epitaxial cellular breakdown structures are fabricated on the Si surface decorated at the cell boundaries by Ag nanoparticles
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Last time updated on 03/05/2021