Sequentially deposited layer by layer up to five vanadium oxide film is deposited on glass and silica substrates at 300 k by vacuum thermal evaporation technique. The deposited samples subjected to reduction process in the preparation situe by hydrogen gas at 473k for 10 minutes and 573 k for 10, 20 minutes. The XRD investigation of the samples demonstrates that the pristine sample is amorphous while those reduced are crystalline. The existed phases in virgin samples are educated by Raman spectroscopy which indicates the single V2O5 phase. The different phases in the reduced sample are identified by analyzing their XRD patterns. The electrical resistance of the reduced samples is measured as a function of temperature during heating and cooling cycles. The transition temperature from semiconducting to metal state is defined by the derivative of dR/d
