Influence of Copper Phthalocyanine (CuPc) Thin Layer on Capacitance-Voltage Characterization of a Device Consisting of ITO/CuPc/PVK/Rhodamine B Dye Layers
In this paper, the influence of copper-phthalocyanine (CuPc) hole-injection layer on the capacitance-voltage (CV) characteristic performance of ITO/CuPc/PVK/Rhodamine B/Pb devices was investigated. The thickness of the CuPc layer was varied form 5 nm to 50 nm. The thin films were deposited on the PVK layer by thermal vacuum deposition at 1.0 × 105 torr using MiniLab 080 system. The thicknesses were measured using using FILMETRICS F20-UVX thin-film analyzer. It was found that as the thickness of CuPc layer decreases the transition voltage (VT) and built-in voltage (Vbi) decrease except for a thickness 5 nm, which shows negative differential resistance (NDR)
