Recent commercialization has increased the research interest in transparent conducting oxides like indium tin oxide being implemented in display technologies and sensors. A wide range of values (4.2-5 eV) for the work function of ITO films are reported in literature. In this paper, we present an approach to extract the work function of indium tin oxide films from MOSFET devices. RF sputtered indium tin oxide is used as a transparent gate electrode to fabricate n-MOSFET. For the fabrication of the MOSFET, a four-level mask is used. Electrical characterization is performed on these MOSFET devices. We obtained work function value in the range between 4.62-4.81 eV using this technique
