This paper describes an electric field sensor which can control optical bias angle and improve the temperature drift of the sensitivity. The optical bias angle is controlled by applying a suitable stress to the LiNb0 3 substrate, and the temperature drift is reduced by inserting a Si semiconductor layer between the electrode and the Si02 buffer layer. The optical bias angle can be changed from 40[deg.] to 90[deg.], and temperature drift of the insertoin loss is within 2[dB] over a temperature range from O[deg.] to 40[deg.].1994 International Symposium on Electromagnetic Compatibility (EMC\u2794/Sendai), May 16 - 20, 1994, Hotel Sendai Plaza, Miyagi, Japa
