锗材料由于具有比硅材料高的电子和空穴迁移率，在通信波段有较高的吸收系数并且与成熟的硅工艺相兼容等优点，使其成为下一代高性能微电子器件的首选替代材料。然而Ge器件存在着漏电流大的致命缺点，同时Ge器件尺寸的缩小会引入一些小尺寸效应。绝缘体上锗（Germanium-on-Insulator，GOI）结合了Ge材料及SOI（Silicon-on-Insulator）结构的优点，其独特的全介质隔离结构可以很好地解决体Ge材料器件的不足。虽然采用智能剥离技术（Smart-cutTM）是获得低缺陷密度GOI材料的最有效方法，但是智能剥离技术需要在低退火温度下获得高键合强度，这对键合前Ge晶片的表面处理提出...Germanium has received great interest as one of the possible candidates for next-generation high-performance microelectronic device, due to the much higher electron and hole mobilities compared to Si, as well as its favourable absorption coefficient in the near infrared wavelength regime and its compatibility with Si CMOS process. However, germanium devices also suffer a fatal flaw of large leakag...学位：工学硕士院系专业：物理科学与技术学院_微电子学与固体电子学学号：1982013115297
