本文采用荧光窄化技术，对低组分的gAAS（1-X）PX∶n（X＝0.76，0.65）混晶材料中nX束缚激子的声子伴线进行了研究.在低温下，选择激发nX带时，我们得到了与gAP∶n低温发光谱中类似的声子伴线结构.根据实验结果，给出了混晶中各种声子的能量.另外，对组分为X＝0.76的gAAS（1-X）PX∶n混晶样品，我们还首次观察并分析了多声子重现光谱.luorescence line narrowing technology has been used to study the phonon sidebands of Nx-bound excitons in GaAs1-xPx: N in details.Under selective excitation into inhomogenously broadened Nx band at low temperature, the sharp phonon sidebands like those in low temperature PL spectrum For GaP: N are observed.According to the experimental results, we obtained the energy values of various phonons in GaAs1-xPx: N alloys with the composition x=0.76 and 0.65.The photoluminescence spectrum with periodically repeated phonon sideband structure For GaAs1-xPx: N (x=0.76) is observed and analyzed For the First time.国家和福建省自然科学基
