目前白光发光二极管（whitelight–emittingdiode，WLED）的主流方案是：用InGaN的蓝色LED（light–emittingdiode，LED）配合Ce3+掺杂YAG的黄色荧光粉。但这种WLED因发光颜色随驱动电压和荧光粉涂层厚度的变化而变化，显色指数低。为解决上述问题采用近紫外发光二极管（near–ultravioletlight–emittingdiode，near–UVLED）的激发下，混合可产生蓝红双色光的纯相铕锰共掺杂硅酸镁钡荧光粉（Ba3MgSi2O8:Eu2+，Mn2+）和可产生绿光的荧光粉将是实现WLED的一个创新方案。 Ba3MgSi2O8:Eu2+...The current mainstream of the fabrication for white light-emitting diode (WLED) is combination of a blue light-emitting diode (LED) and yellow-emitting phosphor Ce3+ doped YAG. However such a white light devices has a low color rendering index because the emission color from it changes with the variation of drive voltage and phosphor coating thickness. One innovative approach to fabricate WLED is ...学位：工学硕士院系专业：材料学院材料科学与工程系_材料学学号：2072008115059
