INFLUENCE OF IRRADIATION OF Cu(In, Ga)Se2 THIN FILMS BY 10 MeV ELECTRONS ON PHOTOLUMINESCENCE SPECTRA

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Publication date
1 January 2020
Publisher
УрФУ

Abstract

Thin films of Cu(In,Ga)Se2 on Mo coated glass substrates were studied by photolumines-cence (PL) technique before and after irradiation with a dose of 1.8·1015 cm–2 of 10 MeV electrons to determine the nature of radiation defects in Cu(In,Ga)Se2.Работа выполнена при финансовой поддержке РНФ (проект № 17-12-01500)

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