Evans, Donald M.

Meier, Dennis

English

OPUS Augsburg

 Abstract Bulletin of the American Physical SocietyAPS March Meeting 2019Volume 64, Number 2Monday–Friday, March 4–8, 2019; Boston, MassachusettsSession X04: Dielectric & Ferroic Oxides -- Structure & Functionality of Ferroic Domain Walls8:00 AM–10:48 AM, Friday, March 8, 2019BCEC Room: 107CSponsoring Units: DMP DCOMPChair: Javier Junquera, University of CantabriaAbstract: X04.00004 : Towards adaptable nano-circuitry - functional domain walls and disorder engineering in improperferroelectrics8:36 AM–9:12 AMPresenter:Donald M. Evans(Materials Science and Engineering, Norwegian University of Science and Technology - NTNU)Authors:Dennis Meier(Materials Science and Engineering, Norwegian University of Science and Technology - NTNU)Donald M. Evans(Materials Science and Engineering, Norwegian University of Science and Technology - NTNU)Oxide materials exhibit a broad range of tunable phenomena, including magnetism, multiferroicity, and superconductivity. Oxide interfaces are particularlyintriguing. The low local symmetry combined with the sensitivity to electrostatics and strain leads to unusual physical properties. Recently, ferroelectricdomain walls have attracted attention as conducting and spatially mobile interfaces. In order to ultimately design domain-wall-based devices and circuitry,however, additional functionality beyond just conduction is required.In my talk, I will discuss how improper ferroelectric domain walls can be used to emulate key electronic components. In the first part, I will address domainwalls in ErMnO3. The system naturally develops all fundamental types of ferroelectric domain walls, including neutral as well as negatively and positivelycharged wall configurations. I will show how the electronic domain-wall properties can be controlled and discuss the possibility to use such walls fordesigning, e.g., 2D digital switches and half-wave rectifiers [1]. In the second part, I will consider domain walls in spin-spiral multiferroics with strongmagnetoelectric couplings and additional functionality that arises from the interplay of charge and spin degrees of freedom. Because of the coupling, it ispossible to reversibly control the configuration at ferroelectric domain walls by magnetic fields, switching between nominally charged and neutral domain wallstates [2,3]. Furthermore, I will present an innovative approach for controlling conductivity and wiring up domain-wall-based devices with nanoscale spatialresolution, bringing us an important step closer to adaptable all-domain-wall circuitry for next-generation nanotechnology.[1] J. Schaab, et al., Nature Nano. DOI:10.1038/s41565-018-0253-5  (2018)[2] N. Leo, et al., Nature Commun. 6, 6661 (2015)[3] M. Matsubara, et al., Science 348, 1112 (2015)

Towards adaptable nano-circuitry - functional domain walls and disorder engineering in improper ferroelectrics [Abstract]

https://opus.bibliothek.uni-augsburg.de/opus4/files/95992/95992.pdf

Towards adaptable nano-circuitry - functional domain walls and disorder engineering in improper ferroelectrics [Abstract]

Abstract

Similar works

Full text

Available Versions

OPUS Augsburg