This thesis explains the development and fabrication of first in-house MOSFET device
using spin -on dopant technique at KUKUM Microfahrication Cleanroom. The process
started with the establishment of process flow, process modules, and process parameters.
Four modules were developed. The characteristics prior to the MOSFET device
fabrication namely dry and wet oxidation, etching, resist thiclrness, exposure dose
optimization, n-type and p-type spin on dopant and diffusion and also metal thiclrness
characterization were recorded. The data were analyzed and applied in the fabrication of
MOSFET devices. The MOSFET fabrication process llsed blanket-field oxide for
isolation, positive resist for lithography process, Boron and Phosphorus for source/drain
doping and aluminum for metallization. The whole MOSFET process had fOllT masking
process specifically source/drain masking, gate masking, contact masking, and metal
masking. The result for each processes are presented in this thesis
