Experimental analysis of two measurement techniques to characterize photodiode linearity

Abstract

As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate is used for the comparison. Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes.United States. Defense Advanced Research Projects Agency (PHORFRONT program under United States Air Force contract number FA8750-05- C-0265