Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid Technique

Abstract

We report the results of a low temperature photoluminescence investigation of 3C-SiC samples grown by chemical vapor deposition on vapor-liquid-solid seeds. The main parameters tested in this series of samples were i degrees) the effects of changing the C/Si ratio and ii degrees) the growth temperature on the final growth product. On the first series the C/Si ratio varied from 1 to 14 for a constant growth temperature of 1550 C. For the second series, the growth temperature varied from 1450 to1650 degrees C by steps of 50 degrees C with a constant C/Si ratio equal to 3. According to this work, the best results (minimum incorporation of impurities and best crystal quality) were obtained when using a C/Si ratio of 3 at 1650 degrees C