Bruneel, Els

De Gusseme, Bart

Muylaert, Ilke

Narayanan, Vyshnavi

Penneman, Greet

Schwarz, Anne

Van Der Voort, Pascal

Van Driessche, Isabel

Van Langenhove, Lieva

Ghent University Academic Bibliography

XPS – as a versatile tool  in the research of the Department of Inorganic and Physical chemistry, UGent  Els Bruneel, V Narayanan, G. Penneman, I. Muyllaert  B. De Gusseme, A. Swhwarz, L. Van Langenhove P. VanderVoort, I. Van Driessche   Annual XPS –users meeting 16-10-2009 Content  -  Thin film superconducting materials  by sol gel chemistry - Fibrous transistors, in cooperation with dep. of Textiles, Ugent - Biogenic nanoparticles, in cooperation with labMET - Supported metal oxide catalyst for liquid oxidation reactions  Sol                                   Gel               oxide thin film         (5-100 nm) Gelation, T≤60°C   Deposition on substrates by dipcoating, printing Heat treatment under controlled atmosphere Mn+ Mn+ Mn+ Mn+ Mn+ H2O Mn+ Mn+ Mn+ Mn+ Principle liquid precursor-layer   dip-/spin-coating from aqueous solutions   ink-jet printing from water-based inks Deposition     optical analysis : UV/Vis/IR/Raman spectroscopy  rheology : viscosity, surface tension, contact angle, particle size, ...  thermal analysis : TGA/DTA/DSC/TMA  microscopy : AFM, optical, SEM/EDX, (HR)TEM with EELS, STEM, EDX  structural analysis : XRD, pole figures, BET   electromagnetic : resistivity measurements  complexometry : potentiometric titrations   XPS  ceramic high Tc superconductor architectures on NiW tapes : YBCO, CeO2, La2Zr2O7  TiO2 for self-cleaning surfaces : on ceramic tiles and steel  YSZ for thermal barrier coatings and solid oxide fuel cells  mesoporous organosilica layers for low-k dielectrics (through ...)  Diesel soot catalyst   Materials Analysis of   solutions, gels and thin films: High Tc superconductor architecture :  Textured, flexible NiW tape LZO (250 nm) by dipcoating from aqueous solutions CeO2 (50-100 nm) by dipcoating from aqueous solutions YBCO by dipcoating or printing from aqueous solutions Applications : -resistance ~0  at -180 °C - second generation HTS wires - fault current limiter - magnets - coils for renewable energy  - induction heaters ...  Buffer layers prevent O from diffusing to Ni substrate and Ni-diffusion into YBCO layer  High Tc superconductor HTS architecture: XPS, TEM, FIB  Sputter XPS analysis   depth profiling • Ni - diffusion through buffer         layers for ≠ processing •  determination of layer thickness •  compositional analysis •  degree of oxidation (HR)-TEM analysis of interface, surface, crystalinity/texture Cs-corrected TEM equiped with EELS, STEM, EDX ...  Study of oxidation state of Cerium and Ni-diffusion, a single layer pHd Greet Penneman (2007) Escalab 250 (VG Scientific)      Ce+4 ion : (Xe)  = 5p6 4f0                              Ce+3 ion: (Xe) 4f1= = 5p6 4f1         ionic:          Ce: 5p6 4f0         O: 1s2 2s2 2p6  Ionic:          Ce:  5p6 4f1            O: 1s2 2s2 2p6       less ionic:   Ce: 5p6 4f1            less ionic:   Ce: 5p6 4f2       Ce: 5p6 4f2            Ce-O  is not 100 % ionic   Burrough’s notation: XPS narrow scan of the Ce 3d region showing the typical spectrum for Ce4+. Fitting: contstraints: doublet separation, peak position, FWHM, peak shape  Top: Ce (IV) Core: Ce (III) Due to sputtering?  Study of oxidation state of Cerium and Ni-diffusion, a single layer pHd Greet Penneman (2007) Escalab 250 (VG Scientific)  “Multiple buffer layer architecture in HTSC- Deposition and characterization”  V. Narayanan, V. Cloet, N. Van de Velde, P. Lommens, K. De Buysser, E. Bruneel, I. Van Driessche and S. Hoste, Eucas 2009, Berlin LZO of 40nm CeO2 of 30nm Ni-W substrate CeO2 of 30nm epitaxial growth along (001) plane  (W) LZO CeO2 CeO2 Ni-diffusion The objective is to study the role of buffer layers in transferring the texture of Ni-W substrate to YBCO (XRD) and its effective role in prevention of penetration of Ni into YBCO  Continuation :  Multiple layers,  Vyshnavi Narayanan XRD spectrum  XPS etching Biogenic metals: XPS analysis of cerium from organic origin B. De Gusseme, Prof. Verstraete  (LabMET)    Oxidation state BE (eV) Ce(IV) 898.4    3d5/2 916.9    3d3/2 Ce(IV) 888.9    3d5/2 907.5     3d3/2 Ce(IV) 882.3     3d5/2 901.0     3d3/2 Ce(III) 880       3d5/2 899       3d3/2 Ce(III) 886       3d5/2 904       3d3/2 Table 1: Overview  literature values for Ce3d3/2 and 3d5/2 Illustration: TEM of zerovalent paladium particles precipitated at the cell surface of Shewanella oneidesis Biogenic metals in advanced water treatment TRENDS IN BIOTECHNOLOGY  27,2 , 90-98  FEB 2009 Tom Hennebel, Bart De Gusseme, Nico Boon, Willy Verstraete, UGENT  Pd 880884903899.5x 10246485052545658606264CPS920 910 900 890 880 870 860Binding Energy (eV)Ce III-phosphate Goal: In a biological process cerium-ions are removed from a solution into a solid state. The question was to identify the oxidation number of the cerium in the solid state.  The paste like substance was spread onto a Sn-substrate. It is shown that the presence of cerium in the sample could be confirmed. The oxidation state of the cerium is Ce(III)  CopperOxygenCarbonx 1010246810% Concent.0 200 400 600 800 1000 1200Etch Time (s)Textile based transistor Dep. Textiles A. Swhwarz, prof. Van Langenhove  Gate, Cu Insulating layer, Polyimide Semiconductive layer Drain Source Steps towards a textile based transistor – Development of the gate and insulating layer, A. Schwarz, J. Cardoen, E. Bruneel, J. Hakuzimana, Philippe Westbroek, S.Hoste, Lieva Van Langenhove, submitted Determination of the thickness of the Cu-layer.  Based on differences in etch-rate between Ta2O5 and Cu    350 nm Textile wire/tape OVOOOVOOOMonomeric species Oligomeric species Crystalline V2O5 OH OVCl ClOOVHO OHOCH2OHOH VCl ClOVHO OHOVOCl3    CVD VOOOOMuylaert I, et al., Phys. Chem. Chem. Phys., (2009),  Vanadium grafting Study of Vanadiumoxide on mesoporous fenol resins Ilke Muylaert, prof. Van Der Voort Ultra-stable and zero leaching supported metal oxide catalyst for liquid oxidation reactions    (a)  V2O5  Crystalline  (b)  NH4VO3            +5  (c)  VO(acac)2       +4  (d)  P/F Resin     +5 (+4) VOOOO(d) (b) (c) (a) Characterization – XPS Determination oxidation state of Vanadium V 2p3/2 V+5 V+4 OH OVCl ClOOVHO OHODRIFT XPS V-O-Ar V-O-Ar Structural information:  C- peak at low energy 281.5 eV:   C-OV Due to low electronegativity and soft center of vanadium atom EN. O: 3.5, EN. C: 2.5, EN. H: 2.1 >  EN. V: 1.6 XPS and DRIFT spectra before and after grafting with Vanadium Thanks  

XPS as a versatile tool in the research of the Department of Inorganic and Physical Chemistry, UGent

https://biblio.ugent.be/publication/3104469/file/3104524

XPS as a versatile tool in the research of the Department of Inorganic and Physical Chemistry, UGent

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