'International Digital Organization for Scientific Information (IDOSI)'
Abstract
AlxGa1-xN thin films with the GaN buffer layer was deposited on Si(111) substrate by chemical solution
deposition (CSD) method. The objective of this research was to evaluate the electrical properties of AlxGa1-xN
with variation of Al mole fraction. The source for Ga and Al were gallium oxide (Ga2O3) and aluminum oxide
(Al2O3), respectively as group III precursors and radical nitrogen resulted by high temperature decomposition
of nitrogen gas. The mole fractions of solutions were varied between 15 to 35%. The formed white crystal was
dissolved in ethylene diamine to form gel with molarities of 3-6 M. Therefore, the gel was superimposed on
substrates Si with spin-coater at speed of 1100 rpm. The formed layer was then sintered at temperature of 900 C o
such that it decomposed at N2 gas environment to form AlxGa1-xN. The composition of films was measured by
energy dispersive of x-ray (EDX) and the measured Al concentrations were in the range of 9.52% to 24.19%.
The electrical transport of the films was measured by means of Hall effect measurement at room temperature.
The Hall mobility decreases with the increase of aluminum (Al) concentration and decrease carbon
concentration. The resistivity increases with the increase of Al concentration. From the Hall effects
measurement the AlxGa1-xN films have n-type conduction originated from nitrogen vacancy