Perpendicularly magnetized structures that are switchable using a spin
current under field-free conditions can potentially be applied in spin-orbit
torque magnetic random-access memory(SOT-MRAM).Several structures have been
developed;however,new structures with a simple stack structure and MRAM
compatibility are urgently needed.Herein,a typical structure in a perpendicular
spin-transfer torque MRAM,the Pt/Co multilayer and its synthetic
antiferromagnetic counterpart with perpendicular magnetic anisotropy, was
observed to possess an intrinsic interlayer chiral interaction between
neighboring magnetic layers,namely the interlayer Dzyaloshinskii-Moriya
interaction (DMI) effect. Furthermore, using a current parallel to the
eigenvector of the interlayer DMI, we switched the perpendicular magnetization
of both structures without a magnetic field, owing to the additional
symmetry-breaking introduced by the interlayer DMI. This SOT switching scheme
realized in the Pt/Co multilayer and its synthetic antiferromagnet structure
may open a new avenue toward practical perpendicular SOT-MRAM and other SOT
devices