Electrical resistivity of single crystal arsenic at very low temperatures

Abstract

The authors have carried out high-precision measurements of the electrical resistivity on very high-quality arsenic single crystals along the binary direction below 4K. The results show that rho approximately Tn with n increasing from 3 to 4 below 2K. This strong temperature dependence is a signal of carrier-phonon scattering in this temperature regime. No evidence of a superconducting transition was observed down to as low as 15 mK on the samples.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/49181/2/jfv16i6pL103.pd

    Similar works