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Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor
Authors
Tayo I. Akinwande
Raymond S. Balcerak
+8 more
Thomas G. Bramhall
Nibir Dhar
Nicole DiLello
Stuart Horn
Judy L. Hoyt
Yash R. Puri
Robert A. Richwine
Ashok K. Sood
Publication date
31 May 2019
Publisher
'SPIE-Intl Soc Optical Eng'
Doi
Cite
Abstract
SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with Si-MEMS Bolometers. © 2010 Copyright SPIE - The International Society for Optical Engineering
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Last time updated on 28/12/2021
DSpace@MIT
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:dspace.mit.edu:1721.1/1376...
Last time updated on 19/12/2021