Anomalous Hall conductivity control in Mn$_3$NiN antiperovskite by epitaxial strain along the kagome plane

Abstract

Antiferromagnetic manganese-based nitride antiperovskites, such as Mn$_3$NiN, hold a triangular frustrated magnetic ordering over their kagome lattice formed by the Mn atoms along the (111)-plane. As such, frustration imposes a non-trivial interplay between the symmetric and asymmetric magnetic interactions, which can only reach equilibrium in a noncollinear magnetic configuration. Consequently, the associated electronic interactions and their possible tuning by external constraints, such as applied epitaxial strain, play a crucial role in defining the microscopic and macroscopic properties of such topological condensed matter systems. Thus, in the present work, we explored and explained the effect of the epitaxial strain imposed within the (111)-plane, in which the magnetic and crystallographic symmetry operations are kept fixed, and only the magnitude of the ionic and electronic interactions are tuned. We found a linear shifting in the energy of the band structure and a linear increase/decrease of the available states near the Fermi level with the applied strain. Concretely, the compression strain reduces the Mn-Mn distances in the (111) kagome plane but linearly increases the separation between the stacked kagome lattices and the available states near the Fermi level. Despite the linear controlling of the available states across the Fermi energy, the anomalous Hall conductivity shows a non-linear behavior where the $\sigma_{111}$ conductivity nearly vanishes for tensile strain. On the other hand, $\sigma_{111}$ fetches a maximum increase of 26\% about the unstrained structure for a compression value close to $-$1.5\%.This behavior found an explanation in the non-divergent Berry curvature within the kagome plane, which is increased for constraining but significantly reduced for expansion strain values..