Ferroelecticity, one of the keys to realize nonvolatile memories owing to the
remanent electric polarization, has been an emerging phenomenon in the
two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW)
memories using 2D ferroelectric materials as an ingredient are very limited.
Especially, gate-tunable ferroelectric vdW memristive device, which holds
promises in future neuromorphic applications, remains challenging. Here, we
show a prototype gate-programmable memory by vertically assembling graphite,
CuInP2S6, and MoS2 layers into a metal-ferroelectric-semiconductor
architecture. The resulted devices exhibit two-terminal switchable
electro-resistance with on-off ratios exceeding 105 and long-term retention,
akin to a conventional memristor but strongly coupled to the ferroelectric
characteristics of the CuInP2S6 layer. By controlling the top gate, Fermi level
of MoS2 can be set inside (outside) of its band gap to quench (enable) the
memristive behaviour, yielding a three-terminal gate programmable nonvolatile
vdW memory. Our findings pave the way for the engineering of
ferroelectric-mediated memories in future implementations of nanoelectronics