Electrical Transport Measurements on Ni Films Deposited on MoS₂

Abstract

MoS2 is a semiconductor with attractive characteristics that make it a possible replacement material for silicon in electronics devices. It is therefore important to study the behavior of metals that are in contact with MoS2. We have investigated the electrical resistance of a thin film of nickel grown on MoS2 as a function of temperature with and without a magnetic field applied. The Ni-MoS2 structure exhibits semiconducting behavior. We present evidence that electron transport proceeds via hopping