SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics

Abstract

Abstract — We present the first investigation of the optimal implementation of SiGe BiCMOS precision voltage references for extreme temperature range applications (+120 oC to-180 oC and below). We have developed and fabricated two unique Ge profiles optimized specifically for cryogenic operation, and for the first time compare the impact of Ge profile shape on precision voltage reference performance down to-180 oC. Our best case reference achieves a 28.1 ppm / oC temperature coefficient over +27 oC to-180 oC, more than adequate for the intended lunar electronics applications. Index Terms — analog circuits, SiGe HBT, cryogenic temperature, voltage reference, device physics