Etch pattern on surfaces of ZnO crystal has been observed by using an E.M. and an S.E.M. Two kinds of boundaries on which stacking orders of Zn and O atomic planes change have been developed on the plane {1010} by using etching technique. Hydrofluoric acid (～46%) was used as etchant. One boundary on which stacking of Zn and O planes changes from one order, -O.Zn-O.Zn-, to the other order, -Zn.O-Zn.O-, is a twin boundary. While, the other boundary on which stacking of Zn and O planes changes from the latter order to the former one is not considered as a twin one. Results of observation suggest to us that the decrease in the growth rate of the crystal needle is due to the generation of twin boundaries in the crystal

Kubo Ikumaro

Tomiyama Noriyuki

Nagasaki University's Academic Output SITE: NAOSITE

Sci. Bull. Fac. Educ, Nagasaki Univ., No.24, pp.13-21 (1972)Inversion Boundaries Developed by Etchingon {1010} of ZnO CrystalIkumaro KUBO and Noriyuki TOMIYAMAFac. of Educ, Nagasaki Univ.,Nagasaki(Received October 31 , 1972)Abstract15Etch pattern on surfaces of ZnO crystal has been observed by using anE.M. and an S.E.M. Two kinds of boundaries on which stacking orders of Znand O atomic planes change have been developed on the plane {1010} byusing etching technique. Hydrofluoric acid (～46%) was used as etchant. Oneboundary on which stacking of Zn and O planes changes from one order,-O.Zn-O.Zn-, to the other order, -Zn.O-Zn.O-, is a twin boundary. While, theother boundary on which stacking of Zn and O planes changes from thelatter order to the former one is not considered as a twin one. Results ofobservation suggest to us that the decrease in the growth rate of the crystalneedle is due to the generation of twin boundaries in the crystal.§ 1. IntroductionPolarity of ZnO crystal has been studied by the several authors. Fromthe result of Xィay analysis, Mariano el a/. have confirmed that in ZnO crys-tal, polarity of the spicular growth end as grown is electropositivel). Fromthe result of chemical etching study using Hydrofluoric acid, Klein has as-signed the positive sign of the c-axis of the crystal to the direction of thevertexes of pseudo-isosceles triangles, etch figure, produced on the plane{1010}2). He also reported the etch figure as hillock. By chemical etchingstudy, Heiland θl a/. have found that ZnO crystal grows sometimes as theone which is divided into two parts. One is the central lod and the other isThis report has been read by I. Kubo at International Union of Crystallography, NinthGeneral Assembly and International Congress held at Council of Japan, Kyoto, onSeptember 2, 1972.14 Ikumaro KUBO and Noriyuki TOMlYAMA a cylinder surrounding the first one. These two parts in the crystal have a coaxis along the c-axis, and the opposite directions in polarity3). According to ion bombardment experiment performed by ourselves, the atomic plane on the spicular growth end has been confirmed as a Zn plane. On the other hand, it was found to be ambiguous that the plane on the flat growth end is a Zn plane or an O plane. We, therefore, suggested that ZnO crystal might grow in stacking orders of Zn and O planes as not only one order, -Zn.O-Zn.O- but also the other order, -O.Zn-O.Zn-4). Gehman et al. have reported that interstice lattice stacking faults in the structure such as BeO bicrystal lead to the formation of inversion twins, as shown in his schematic model of the structure of the crystal5). By chemical etching study, we have found two kinds of boundaries on which stacking orders of Zn and O planes change along the c-axis').7). In the present paper, the experimental results obtained by ourselves are reported in detail. S 2 . Observation ZnO crystal needles ( I mm squares in cross section and 10mm in length) were prepared by our method. That is, needles were prepared by heating ZnF2 in air at elevated temperatures"). Then, the needles were etched by Hydro-fluorrc acid (-46~) for 20 min in room temperature A. {1010} plane The chemical etching behaviors on the planes {1010} are as follows : In the crystal with the spicular growth end, the etch feature as shown in Fig. 1 is similar to the pattern, pseudo-isosceles triangle, in agreement with Klein's observation.2) The pattern was confirmed as pits by stereographs. 'The pattern on the etched crystal with the flat growth end is shown in Fig. 2(a). In the figure, a fine line is observed. It is seen that the line shown in Fig. 2(b) which corresponds to the fine line mentior,ed above, is perpendicular to the c-axis. In Fig.2(a), besides the line, another curved' boundary is also observed in the upper region. Fine lines and curved boun~aries are, here-after, referred as F-boundary and C-one, respectively. The direction of pseudo-isosceles triangles in the two regions separated by F-boundary or C-one are all the same in each region. Triangles in the regions separated by boundaries are face to face with their vertexes, and face to face with their bases on F-boundary and on C-one, respectively. In Fig. 5, it is observed that two regions separated by F-boundary do not show misfit, that is in coherent, on the boundary. On the other hand, in Fig. 4, it is observed that those two regions separated by C-boundary show misfit, that Inversion Boundaries Developed by Etching on {lOIO} of ZnO Crystal 15 is in incohernt. The stereographs as shown in Fig. 5 (a) and (b) show that F-boundary is a fine protrusive band and that C-boundary exists in rather depressed zone. B. {OOO1} plane Fig. 6 (a) and (b) show the etch patterns developed on the planes {OOO1} and {1010} of a couple of crystals which had been obtained by cleaving a crystal needle rather perpendicularly to the c-axis. In these figures, it is seen that two surfaces {OOOI i' which are different in polarity suffer diffrent effects by etching. Sometimes two groups of vertexes and bases of pseudo-isosceles triangles are observed on the intersection of the planes {OOOI } and {1010}. Such a crystal is referred as S crystal. An example of the irregular pattern on the etched surface of S crystal is shown in Fig. 7. In the figure, it is obselved that rough and smooth regions have been developed on a etch-ed surface. It is seen that the former had been etched more easily than the latter which is the background of a few number of larger conical pits. S 3. Discussion Klein has assigned the positive sign of the c-axis of the crystal to the direction of the vertex of pseudo-isosceles triangle produced on the plane {1010} of ZnO crystala). Heiland et al, have reported that the direction of the pos-itive sign of the c-axis coincides with Zn atomic plane which is the polarized surface of ZnO crystal3). From these and the etch pattern on the plane {10iO} as shown in Fig. 2, it can be clearly concluded that tnere are two kinds of inversion boundaries and that stacking orders of Zn atomic plane and O one are opposite to each other in each region separated by F-boundarJ and C-one. In other words, stacking of Zn and O planes changes from one order, -O.Zn-O.Zn-, to the other order, -Zn.O-Zn.O-, on F-boundary and changes from one order, -Zn.O-Zn.O-, to the other order, -O.Zn-O.Zn-, on C-one. The plane {1010} is etched such that F-boLmdary behaves as a protrusive band and C-one exists in a depressed zone. This fact means that C-boundary is etched more easily than F-boundary. From these, the schematic top view of the etched plane {1 O1 O} can be drawn as shown in Fig. 8 (a) and (c). As shown in these figures, l'*<1'2, where l', and l'2 show thickness of crystal layers which had been etched out of the surface planes {1010}. Mariano et al. have confirmed that negatively polarized O atomic planes is etched more easlly thm pOsitivey polarized Zn atomic planes'). The figLlres shown in Fig. 6 (a) and (b) coincide with their confirmation. 16 lkumaro KUBO and Noriyuki TOMlYAMA Fig.8 ( a ) TOP VIEW OF ETCHED PR ISMAT I C PLAN E __ _ ~L l ll_'.V'.".'.It':'.'･.･r'l"I"""'tl""'1?~r.;"."II";?71lf"'tl'~lV" 17f" f ' /" 'll"I/'/ //" 'lll!"'1"Il" //'1/'1'1'1/'~' - / l'//' / !~' I, ･-~ l Fig 8( b) Fig.8( c ) c~ .; ((, o I .,,, ' l' . . ., .,, f e,el l" I ., "I '."4 ;') .i, ;'.1,t .....1 ..~ :, . .., ;1') " d ; ;.1~p , 'll ('  "  Ia l' / // I l' ll"" ' 'l"' ' l'J 'l;1.J' 'l"' ';1110, ll" l. .., Fig.8( a). The schematic representation of the etched surface {OOOl}. In the figure, 11<12, where l, and 12 represent thickness of crystal layers which had been etched out of the polarized Zn planes and O ones, respectively. Flg 8( b)and (c ) . The schematic representation of the etched {lOIOl. In these figures, l'l<1'2, where l'l and l'2 represent thickness of crystal layers which had been etched out of the surface planes {1010}-From these, and the etch pattern on {OCO1} shown in Fig.7, a schematic top view of the etched planes {1CIC} of S crystal can be drawn as shown in Fig. 8 (a). As shown in the figure, Ii<12, where l, and 12 show thickness of crystal layers which had been etched out of polarized Zn planes and O ones, respectively. Gehman et al. have reported that interstice lattice stacking faults in the structure such as BeO bicrystal lead to the formation of twins*). They have also suggested a model to explain the chazacter of the crystal, wurtzeite type. The model is shown schematicalley in Fig. 9 . In the figure, full lines and dotted ones represent closed packed anion layers and cation ones, respectively. Of course, anion and cation correspond to O and Be ions, respectively. Two kinds of distances between an O atomic plane and a Be atomic one are I .659~0.005A and I .645~0.005A. When an O atomic plane is the crystal surface, the surface is polarized electronegatively. Inversion Boundaries Dcveloped SCH EMAT IC AL by Etching on {lOIO} of ZnO Crystal BOUNDARY FACE (IOI I) 17 { NEGATIVE BASAL * - - - - POSITIVE BASAL BOUNDARY - - - -} BOUNDARY i C~XtS NECATIVE ~ POSITIVE FACE (OOOl] ..-,~. FACE (OOOT) pYRAMIDAL BOUNDARY _ _ _CATION LAYERS CLOSE PACKED ANION LAYERS CATION LAYERS Flg.9. A schematical representation of the structure of BeO crystal. This model bad been suggested by Gehman et al. Furthermore, Gehman et al. appointed that there are two kinds of twin boundaries as shown in Fig. 9 . One twin boundary corresponds to the inver-sion boundary on where the stacking order of Be and O changes from one order, -O.Be-O.Be-, to the other order, -Be.O-Be.O-. The other twin boundary corresponds to the inversion boundary where the stackin>a order changes from one order, -Be.O-Be.O-, to the other order, -O.Be-O.Be-. The former bounda-ry is negative basal one which is in lack of Be atomic plane, while, the latter one is D. ositive basal one which is in excess of Be atomic plane. Gehman et al. has assumed that the O sublattice is continuous across the twin boundary, and that the discontinuity exists only in the Be sublattice. If the model of the crystal structure of BeO is possible to apply to the crystal structure of ZnO which is also II-Vr compound as BeO, F-boundary and C-one in ZnO crystal should correspond to the negative and positive basal boundaries, respectively. Of course O surface and Zn one of the crystal are also negative and positive, respectively. Two schematic etch patterns shown in Fig. 8 (a) and (c) are in inconsistent with the ones which should deducted from Gehman et al.'s model. From the fact C-boundary intersects obliquely with the c-axis, it can be considered that no 'C-boundary corresponds to the one type of the twins suggested by Gehman et al. In preparation of ZnO crystal by using our method, both kinds of crystals with the spicular growth ends and the ones with the flat growth ends had been sometimes produced on the inside wall of platinum crucible. The length were larger in the former than in the latter. No C-boundary has developed on the etched planes {1 OTO} J 18 Ikumaro KUBO and Noriyuki TOMlYAMA of the former but on the etched planes {1010} of the latter. These facts suggest to us that the decrease in the growth rate of ZnO crystal inside the platinum crucible is due to the generation of F-boundary caused by any change in the crystal growth conditions in the growing stage. It is clear that after the generation of F-boundary, the stacking order of Zn and O changes from one order, -O.Zn-O.Zn-, to the other order, -Zn.O-Zn.O-, there-fore, O plane becomes the new growth front. F-boundary is a straight line which is perpendicul,ar to the c-axis and C-boundary zigzagged. These facts suggest to us that the terminal plane, Zn plane, of the stacking order, -O.Zn-O.Zn-, and the starting plane, Zn plane, of the order, -Zn.O-Z"^..O- is joined more easily than the terminal plane, O plane, of the stacking order, -Zn.O-Zn.O-, and the starting plane, O plane, of the order, -O.Zn-O.Zn- does. Stepped O planes may play a role of a substrate on which newly created ZnO molecules contact in the stacking order, -O.Zn-O.Zn- to make an apparent misfit between the terminal O plane in the order, -Zn.O-Zn.O-, and the starting O plane in the order, -Zn.O-Zn.O-. Ref erence8 1 ) A.N. Mariano and R.E. Hannemann: J. appl. phys. 34 (1965) 584. 2 ) A. Klein: Z. Phys. 188 (1965) 555. 5 ) G. Heiland. P. Kunstmann and H. Pfister: Z. Phys. 176 (1966) 485. 4 ) I. Kubo and Y. Tokita: Japan. J. appl. phys. 8 (1969) 626. 5 ) W. G. Gehman and S. B. Austerman: Acta cryst. 18 (1965) 675. 6 ) I. Kubo, M. Fujii and M. Hirose: Japan. J. appl. Phys. 8 (1969) 627. 7 ) I. Kubo and N. Tomiyama: Japan. J. appl. phys. 10 (1971) 952. 8 ) I. Kubo: J. Phys. Soc. Japan. 16 (1961) 2558. s ~ Inversion ~ Fig.l Etch pits, developed Boundarres Developed by xl,COO pseudo-isosceles triangles, on the plane {lOIO}. Etching on {lOIO} of ZnO Crystal 19 Fig.2 (a) X 1 50 Two kinds of inversion boundaries developed on the plane {lOIO} by etching. Boundaries are observed in the upper and the lower regions. Fig.2 (b) The enlarged pattern around corresponding to the one, region in Fig.2 (a). ***+..*+ ';.~i ~~ ~ ~ i~ t~! <~ ~' ^~~ ti:{Is~s~:~I{:!o~; ' ~~X ' ~~~=(' S$ ~ x400 the boundary shown in thp_ Iower 20 lkumaro KUBO and Fig.5 Two regions separated They are in coherent to the boundary. X I O , COO by F-boundary. each other on Noriyuki TO iIlYAMA ~' ~ ~~~ ~ *~~~ *r"~~;:*~* '~~~ *~it?~; Fig.4 X I O , OOO Two regions separated by C-boundary They are in incoherent to each other on the boundary. Fig.5 (a) ~~~~;~~.#' ~~;~+*.. S~~{.･r/~:.'** ' >*~**s~+~~: ~~ ,.~ "':fl~:~ X600 A couple of stereographs which and C-boundaries. The figures band and C-one exists in rather ~**..***.* ~~* Fig,5 (b) X60C show the same regions including F-show that F boundary is protrusive depressed zone. Inversion Boundaries Developed by Fig.6 (a) x~CO The figures in the lower region and the upper one are the etch patterns on the planes {].OIO} and {OOOl}. Zn atomic plane, res pectively. ~~ Etching on {lOIO} of ZnO Crystal 21 o (t b t Fig.6 (b) X~00 The figures in the lower region and the upper one are the etch patterns on the planes {lOIO~, and {OOOl}, O atomic plane, respective]y. Fig.7 Etching behavior of the surface kinds ol polarized surfaces. It is etched more easily than the smooth of a few number of larger conical Xl,OOO {OOOl} which includes different observed that rough region Is region which is the background pits. 

Inversion boundaries developed by etching on{1010} of ZnO crystal

Kubo, Ikumaro

Tomiyama, Noriyuki

Nagasaki university's Academic Output SITE

https://nagasaki-u.repo.nii.ac.jp/?action=repository_action_common_download&item_id=6071&item_no=1&attribute_id=18&file_no=1

Inversion boundaries developed by etching on{1010} of ZnO crystal

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Nagasaki University's Academic Output SITE: NAOSITE

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