Electrical potentials and free boundary separating the depletion and neutrality regions in a junction field transistor can be computed using a drift-diffusion model for a MESFET. This paper presents a new numerical algorithm of this model using a fixed point method. Numerical results are encouraging and provides a reasonably free boundary.Electrical potentials and free boundary separating the depletion and neutrality regions in a junction field transistor can be computed using a drift-diffusion model for a MESFET. This paper presents a new numerical algorithm of this model using a fixed point method. Numerical results are encouraging and provides a reasonably free boundary
