Impact Of The Effective Conducting Path Effect (ECPE) On The Convergence Of The Evanescent And The Polynomial Models: Applied To The Submicronic MOSFET
We present a comparative study of submicronic MOSFET characteristics using analytic models of electrostatic potential in the channel. We are particularly interested in the surface potential, threshold voltage, swing and DIBL using the polynomial model with and without ECPE and the evanescent model to analytically express the electrostatic potential. The results show a good agreement between the polynomial model including ECPE, the evanescent model and measures done by simulation tools.We present a comparative study of submicronic MOSFET characteristics using analytic models of electrostatic potential in the channel. We are particularly interested in the surface potential, threshold voltage, swing and DIBL using the polynomial model with and without ECPE and the evanescent model to analytically express the electrostatic potential. The results show a good agreement between the polynomial model including ECPE, the evanescent model and measures done by simulation tools
