The objective of this work is to study the electronic properties of GaInNAs semiconductor alloy in order to obtain quantum well GaInNAs/GaAs structures emitting at wavelengths around 1.3 μm to 1.55 μm, to use as active layers in laser diodes for fiber-optic communication. The incorporation of nitride in the GaInAs alloy gave very particular and attractive properties, the most important being the reduction of the energy of band gap. The anticrossing band model describes these properties; using this model, we determined the effect of nitrogen on the conduction band and the energy gap. We observed that the incorporation of nitrogen decreases the energy of the band gap and increases the emission wavelength. We found a compromise between the concentrations of In and N in order to determine the optimal structures for use in fiber-optic communication
