Amorphous carbon nitride thin films were deposited, at room temperature, on silicon substrates by reactive radiofrequency (RF) sputtering from a graphite target in an atmosphere of nitrogen. The structural properties were investigated by Raman spectroscopy. This spectroscopy reveals the presence of C–C, C=C, C=N and C≡N bonding types. The Raman intensity (ID/IG) ratio of disorder and graphitic bands increased from 1.29 to 2.67 with increasing the RF power from 100 to 400W indicating an increase of structural disorder.Amorphous carbon nitride thin films were deposited, at room temperature, on silicon substrates by reactive radiofrequency (RF) sputtering from a graphite target in an atmosphere of nitrogen. The structural properties were investigated by Raman spectroscopy. This spectroscopy reveals the presence of C–C, C=C, C=N and C≡N bonding types. The Raman intensity (ID/IG) ratio of disorder and graphitic bands increased from 1.29 to 2.67 with increasing the RF power from 100 to 400W indicating an increase of structural disorder
