In this paper the electrical and thermoelectrical performances of p-type Sb2Te3, elaborated by metal organic chemical vapour deposition (MOCVD) in horizontal quartz reactor on pyrex glass substrate arc discussed. The quality of the deposited layers is controlled by X-ray diffraction, Scanning Elecrtron Microscope (SEM), Energy dispersive X-ray spectroscopy (EDX), and Hall effect. The deposition optimal conditions are: substrate temperature equal to 450°C, the pressure ratio R= VI/V is varied from 1 to 13 and TESb partial pressure is about 1 x] 0.4 atm. It is found that the electrical properties of Sb2Te3, change remarkably with VI/V ratio and exhibited a polyerystalline structure. The measurement of the Seebeck coefficient (115µV/K) and the mobility (196cm2/V.s) leads us to confirm the significant potential of the OMCVD method to obtain a good material promising for thermoelectric applications.In this paper the electrical and thermoelectrical performances of p-type Sb2Te3, elaborated by metal organic chemical vapour deposition (MOCVD) in horizontal quartz reactor on pyrex glass substrate arc discussed. The quality of the deposited layers is controlled by X-ray diffraction, Scanning Elecrtron Microscope (SEM), Energy dispersive X-ray spectroscopy (EDX), and Hall effect. The deposition optimal conditions are: substrate temperature equal to 450°C, the pressure ratio R= VI/V is varied from 1 to 13 and TESb partial pressure is about 1 x] 0.4 atm. It is found that the electrical properties of Sb2Te3, change remarkably with VI/V ratio and exhibited a polyerystalline structure. The measurement of the Seebeck coefficient (115µV/K) and the mobility (196cm2/V.s) leads us to confirm the significant potential of the OMCVD method to obtain a good material promising for thermoelectric applications
