Bonar JM

Cowern NEB

Dowsett MG

Grasby T

Morris RJH

Uppal S

Willoughby AFW

Diffusion of B in Ge is studied in the temperature range 800–900 \ub0C using implantation doping and B doped epitaxial Ge layers. Concentration profiles before and after furnace annealing were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients were calculated by fitting the annealed profiles using TSUPREM. We obtained diffusivity values which are at least two orders of magnitude lower than the lowest values previously reported in the literature. Using our values an activation energy of 4.65(\ub10.3) eV is calculated. Present experimental results suggest that interstitial mediated mechanism should be considered for B diffusion in Ge in accordance with recent theoretical calculations. Annealed SIMS profiles also suggest that B solid solubility in Ge is ~2
71018 cm–3 at 875 \ub0C which agrees with literature values

Diffusion of boron in germanium at 800–900\ub0C

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