Ashburn P

Bonar JM

Karunaratne MSA

Uppal S

Willoughby AFW

Zhang J

The accurate process modeling of impurity diffusion in SiGe relies on correct diffusivity data and understanding of the diffusion mechanisms. In this work, we demonstrate the use of an RTA defect injection technique to elucidate the diffusion mechanisms of Sb, As and B in SiGe, and measure inert diffusivities for 10% Ge. In addition, the technique is used to study the suppression of B diffusion by addition of C to Si and SiGe. Diffusivity is found to be enhanced in 10% SiGe compared to Si for Sb and As, while the diffusion of B is retarded. The addition of C further reduces B diffusion. Diffusion of Sb in SiGe is confirmed to be primarily vacancy mediated, but with f v(SiGe) less than or equal fv(Si). Diffusion of B in SiGe is confirmed to be primarily interstitial mediated. By contrast, diffusion of As in Si and SiGe is demonstrated to be mediated by both interstitials and vacancies

Diffusion in sige: Defect injection studies in Sb, as and B

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