PREPARATION BY THERMOVACUUM EVAPORATION OF FILM HETEROSTRUCTURE n-CdS / p-CdTe WITH ANOMALOUS PHOTOELECTRIC PROPERTIES

Abstract

An original thermal vacuum technology is proposed for obtaining an n-CdS / p-CdTe film heterostructure with anomalous photovoltaic and photoresistive properties.It is shown that when a CdS photoresistor is illuminated by illumination from the region of its own absorption (hv³2.5 eV), the photoelectric properties of the active CdTe layer are significantly modulated. This undoubtedly opens up new applied possibilities of this structure in the field of photonics and film optoelectronics

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