Atomic hydrogen cleaning followed by heat cleaning at 450∘C was used
to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions
were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs
cathodes, higher than the results obtained using conventional 600∘C heat
cleaning. The low-temperature cleaning technique was successfully applied to
thin, strained GaAs cathodes used for producing highly polarized electrons. No
depolarization was observed even when the optimum cleaning time of about 30
seconds was extended by a factor of 100