CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
Effect of the Beryllium Acceptor Impurity upon the Optical Properties of Single-Crystal AlN
Authors
Gafurov M.R.
Kazarova O.P.
+3 more
Mokhov E.N.
Nagalyuk S.S.
Rabchinskiy M.K.
Publication date
1 January 2020
Publisher
Abstract
© 2020, Pleiades Publishing, Ltd. Abstract: The influence of the high-temperature (T = 1880°C) diffusion of beryllium ions on the properties of single-crystal aluminum nitride is studied. It is shown that the postgrowth doping of AlN with Be brings about the compensation of shallow Si donor centers uncontrollably incorporated into the AlN lattice during growth. It is established that the introduction of Be into the AlN lattice results in a reduction in the optical absorption of AlN in the visible and ultraviolet regions. The set of results is attributed to a shift of the Fermi level to the top of the valence band of AlN upon the introduction of the Be acceptor impurity
Similar works
Full text
Available Versions
Kazan Federal University Digital Repository
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:dspace.kpfu.ru:net/162072
Last time updated on 03/05/2021